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APT65GP60L2DQ2G

Manufacturers: Microsemi Corporation
Product Category: Transistors - IGBTs - Single
Data Sheet: APT65GP60L2DQ2G
Description: IGBT 600V 198A 833W TO264
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Microsemi Corporation
Product Category Transistors - IGBTs - Single
Series POWER MOS 7®
IGBT Type PT
Packaging Tube
Input Type Standard
Gate Charge 210nC
Part Status Not For New Designs
Power - Max 833W
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Test Condition 400V, 65A, 5Ohm, 15V
Switching Energy 605µJ (on), 895µJ (off)
Td (on/off) @ 25°C 30ns/90ns
Operating Temperature -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Current - Collector (Ic) (Max) 198A
Current - Collector Pulsed (Icm) 250A
Voltage - Collector Emitter Breakdown (Max) 600V

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