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APT35GP120B2DQ2G

Manufacturers: Microsemi Corporation
Product Category: Transistors - IGBTs - Single
Data Sheet: APT35GP120B2DQ2G
Description: IGBT 1200V 96A 543W TMAX
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Microsemi Corporation
Product Category Transistors - IGBTs - Single
Series POWER MOS 7®
IGBT Type PT
Packaging Tube
Input Type Standard
Gate Charge 150nC
Part Status Active
Power - Max 543W
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Test Condition 600V, 35A, 4.3Ohm, 15V
Switching Energy 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C 16ns/95ns
Operating Temperature -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
Current - Collector (Ic) (Max) 96A
Current - Collector Pulsed (Icm) 140A
Voltage - Collector Emitter Breakdown (Max) 1200V

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