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APT33GF120B2RDQ2G
| Manufacturers: | Microsemi Corporation |
|---|---|
| Product Category: | Transistors - IGBTs - Single |
| Data Sheet: | APT33GF120B2RDQ2G |
| Description: | IGBT 1200V 64A 357W TMAX |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Microsemi Corporation |
| Product Category | Transistors - IGBTs - Single |
| Series | - |
| IGBT Type | NPT |
| Packaging | Tube |
| Input Type | Standard |
| Gate Charge | 170nC |
| Part Status | Active |
| Power - Max | 357W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Test Condition | 800V, 25A, 4.3Ohm, 15V |
| Switching Energy | 1.315mJ (on), 1.515mJ (off) |
| Td (on/off) @ 25°C | 14ns/185ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| Current - Collector (Ic) (Max) | 64A |
| Current - Collector Pulsed (Icm) | 75A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
In Stock 20 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $18.42 | $18.05 | $17.69 |
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