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APT35GN120L2DQ2G

Manufacturers: Microsemi Corporation
Product Category: Transistors - IGBTs - Single
Data Sheet: APT35GN120L2DQ2G
Description: IGBT 1200V 94A 379W TO264
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Microsemi Corporation
Product Category Transistors - IGBTs - Single
Series -
IGBT Type NPT, Trench Field Stop
Packaging Tube
Input Type Standard
Gate Charge 220nC
Part Status Active
Power - Max 379W
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Test Condition 800V, 35A, 2.2Ohm, 15V
Switching Energy 2.315mJ (off)
Td (on/off) @ 25°C 24ns/300ns
Operating Temperature -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Current - Collector (Ic) (Max) 94A
Current - Collector Pulsed (Icm) 105A
Voltage - Collector Emitter Breakdown (Max) 1200V

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