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2N7635-GA
| Manufacturers: | GeneSiC Semiconductor |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | 2N7635-GA |
| Description: | TRANS SJT 650V 4A TO-257 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | GeneSiC Semiconductor |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | - |
| FET Type | - |
| Packaging | Bulk |
| Vgs (Max) | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Feature | - |
| Part Status | Obsolete |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Vgs(th) (Max) @ Id | - |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A |
| Power Dissipation (Max) | 47W (Tc) |
| Supplier Device Package | TO-257 |
| Drain to Source Voltage (Vdss) | 650V |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 35V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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