Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | IPD50R650CEBTMA1 |
Description: | MOSFET N CH 500V 6.1A PG-TO252 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | CoolMOS™ |
FET Type | N-Channel |
Packaging | Digi-Reel® |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Discontinued at Digi-Key |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs(th) (Max) @ Id | 3.5V @ 150µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V |
Power Dissipation (Max) | 47W (Tc) |
Supplier Device Package | PG-TO252-3 |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Drain to Source Voltage (Vdss) | 500V |
Input Capacitance (Ciss) (Max) @ Vds | 342pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V |
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |