Manufacturers: | Vishay / Siliconix |
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Product Category: | Transistors - FETs, MOSFETs - Arrays |
Data Sheet: | SQS966ENW-T1_GE3 |
Description: | MOSFET N-CHAN 60V |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
---|---|
Manufacturer | Vishay / Siliconix |
Product Category | Transistors - FETs, MOSFETs - Arrays |
Series | Automotive, AEC-Q101, TrenchFET® |
FET Type | 2 N-Channel (Dual) |
Packaging | Tape & Reel (TR) |
FET Feature | Standard |
Part Status | Active |
Power - Max | 27.8W (Tc) |
Mounting Type | Surface Mount, Wettable Flank |
Package / Case | PowerPAK® 1212-8W Dual |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V |
Supplier Device Package | PowerPAK® 1212-8W Dual |
Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.34 | $0.33 | $0.33 |