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SIHB120N60E-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SIHB120N60E-GE3
Description: MOSFET N-CHAN 650V D2PAK (TO-263
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series E
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V
Power Dissipation (Max) 179W (Tc)
Supplier Device Package D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 600V
Input Capacitance (Ciss) (Max) @ Vds 1562pF @ 100V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

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