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SIDR638DP-T1-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SIDR638DP-T1-GE3
Description: MOSFET N-CH 40V 100A SO-8
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series TrenchFET® Gen IV
FET Type N-Channel
Packaging Cut Tape (CT)
Vgs (Max) +20V, -16V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 0.88mOhm @ 20A, 10V
Power Dissipation (Max) 125W (Tc)
Supplier Device Package PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs 204nC @ 10V
Drain to Source Voltage (Vdss) 40V
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

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