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SIDR626DP-T1-GE3
| Manufacturers: | Vishay / Siliconix |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | SIDR626DP-T1-GE3 |
| Description: | MOSFET N-CHAN 60V |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay / Siliconix |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® Gen IV |
| FET Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Supplier Device Package | PowerPAK® SO-8DC |
| Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 5130pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 42.8A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
In Stock 5635 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $2.79 | $2.73 | $2.68 |
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