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SI2365EDS-T1-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SI2365EDS-T1-GE3
Description: MOSFET P-CH 20V 5.9A TO-236
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series TrenchFET®
FET Type P-Channel
Packaging Tape & Reel (TR)
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id 1V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Supplier Device Package TO-236
Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V

In Stock 33000 pcs

Refrence Price ($) 1 pcs 100 pcs 500 pcs
$0.09 $0.09 $0.09

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