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TPN1110ENH,L1Q

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TPN1110ENH,L1Q
Description: MOSFET N-CH 200V 7.2A 8TSON
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - FETs, MOSFETs - Single
Series U-MOSVIII-H
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Discontinued at Digi-Key
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 4V @ 200µA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 114mOhm @ 3.6A, 10V
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 200V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

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