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TK31E60X,S1X

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TK31E60X,S1X
Description: MOSFET N-CH 600V 30.8A TO-220
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - FETs, MOSFETs - Single
Series DTMOSIV-H
FET Type N-Channel
Packaging Tube
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature Super Junction
Part Status Active
Mounting Type Through Hole
Package / Case TO-220-3
Vgs(th) (Max) @ Id 3.5V @ 1.5mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 88mOhm @ 9.4A, 10V
Power Dissipation (Max) 230W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 600V
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

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