Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | TK10E60W,S1VX |
Description: | MOSFET N CH 600V 9.7A TO-220 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | DTMOSIV |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | Super Junction |
Part Status | Active |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Vgs(th) (Max) @ Id | 3.7V @ 500µA |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 380mOhm @ 4.9A, 10V |
Power Dissipation (Max) | 100W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$2.65 | $2.60 | $2.55 |