Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | SSM6J512NU,LF |
Description: | MOSFET P-CH 12V 10A UDFN6B |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | U-MOSVII |
FET Type | P-Channel |
Packaging | Digi-Reel® |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 16.2mOhm @ 4A, 8V |
Power Dissipation (Max) | 1.25W (Ta) |
Supplier Device Package | 6-UDFNB (2x2) |
Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |