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RN2302,LF

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet: RN2302,LF
Description: X34 PB-F USM TRANSISTOR PD 100MW
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Part Status Active
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Type PNP - Pre-Biased
Resistor - Base (R1) 10 kOhms
Frequency - Transition 200MHz
Supplier Device Package USM
Resistor - Emitter Base (R2) 10 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V

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