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RN1906FE(T5L,F,T)
| Manufacturers: | Toshiba Semiconductor and Storage |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Data Sheet: | RN1906FE(T5L,F,T) |
| Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | ES6 |
| Resistor - Emitter Base (R2) | 47kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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