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RN1130MFV,L3F
| Manufacturers: | Toshiba Semiconductor and Storage |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Data Sheet: | RN1130MFV,L3F |
| Description: | TRANS PREBIAS NPN 0.15W VESM |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 100 kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | VESM |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.03 | $0.03 | $0.03 |
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