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MT3S20P(TE12L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: MT3S20P(TE12L,F)
Description: RF TRANS NPN 12V 7GHZ PW-MINI
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - RF
Gain 16.5dB
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition 7GHz
Supplier Device Package PW-MINI
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Current - Collector (Ic) (Max) 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max) 12V

In Stock 610 pcs

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