Image is for reference only , See Product Specifications

2SD1221-Y(Q)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SD1221-Y(Q)
Description: TRANS NPN 60V 3A PW MOLD
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition 3MHz
Supplier Device Package PW-MOLD
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Current - Collector (Ic) (Max) 3A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max) 60V

In Stock 0 pcs

Refrence Price ($) 1 pcs 100 pcs 500 pcs
$0.00 $0.00 $0.00

Request Quote

Fill out the below form and we will contact you as soon as possible

Bargain Finds

2SC2705-Y(TE6,F,M)
Toshiba Semiconductor and Storage
$0
2SA1225-Y(Q)
Toshiba Semiconductor and Storage
$0
PN4121_D74Z
ON Semiconductor
$0
MMBTA13
ON Semiconductor
$0
STX13005G
STMicroelectronics
$0
STX13003G
STMicroelectronics
$0