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TC58NYG2S3EBAI5
| Manufacturers: | Toshiba Memory |
|---|---|
| Product Category: | USB Flash Drives |
| Data Sheet: | TC58NYG2S3EBAI5 |
| Description: | NAND Flash 1.8V 4Gb 43nm SLC NAND (EEPROM) |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| RoHS | Details |
| Brand | Toshiba Memory |
| Speed | 25 ns |
| Product | NAND Flash |
| Packaging | Tray |
| Memory Size | 4 Gbit |
| Memory Type | NAND |
| Subcategory | Memory & Data Storage |
| Timing Type | Synchronous |
| Architecture | Block Erase |
| Manufacturer | Toshiba |
| Organization | 512 M x 8 |
| Product Type | NAND Flash |
| Data Bus Width | 8 bit |
| Interface Type | Parallel |
| Mounting Style | SMD/SMT |
| Package / Case | TFBGA-63 |
| Product Category | NAND Flash |
| Moisture Sensitive | Yes |
| Supply Current - Max | 30 mA |
| Supply Voltage - Max | 1.95 V |
| Supply Voltage - Min | 1.7 V |
| Factory Pack Quantity | 180 |
| Maximum Clock Frequency | - |
| Maximum Operating Temperature | + 85 C |
| Minimum Operating Temperature | - 40 C |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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