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TC58BYG2S0HBAI6
| Manufacturers: | Toshiba Memory America, Inc. |
|---|---|
| Product Category: | Memory |
| Data Sheet: | TC58BYG2S0HBAI6 |
| Description: | IC FLASH 4G PARALLEL 67VFBGA |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Memory America, Inc. |
| Product Category | Memory |
| Series | Benand™ |
| Packaging | Tray |
| Technology | FLASH - NAND (SLC) |
| Access Time | 25ns |
| Memory Size | 4Gb (512M x 8) |
| Memory Type | Non-Volatile |
| Part Status | Active |
| Memory Format | FLASH |
| Mounting Type | Surface Mount |
| Package / Case | 67-VFBGA |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
In Stock 2 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $4.58 | $4.49 | $4.40 |
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