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SCTW90N65G2V
| Manufacturers: | STMicroelectronics |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | SCTW90N65G2V |
| Description: | SILICON CARBIDE POWER MOSFET 650 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | - |
| FET Type | N-Channel |
| Vgs (Max) | +22V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Base Part Number | SCTW90 |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A, 18V |
| Power Dissipation (Max) | 390W (Tc) |
| Supplier Device Package | HiP247™ |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V |
| Drain to Source Voltage (Vdss) | 650V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $51.98 | $50.94 | $49.92 |
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