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MJD112-1G
| Manufacturers: | ON Semiconductor |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Single |
| Data Sheet: | MJD112-1G |
| Description: | TRANS NPN DARL 100V 2A IPAK |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Transistors - Bipolar (BJT) - Single |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 1.75W |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Transistor Type | NPN - Darlington |
| Base Part Number | MJD112 |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Frequency - Transition | 25MHz |
| Supplier Device Package | I-PAK |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector (Ic) (Max) | 2A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
In Stock 4392 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.68 | $0.67 | $0.65 |
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