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BC517_J35Z

Manufacturers: ON Semiconductor
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: BC517_J35Z
Description: TRANS NPN DARL 30V 1.2A TO-92
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 625mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Type NPN - Darlington
Base Part Number BC517
Operating Temperature -55°C ~ 150°C (TJ)
Frequency - Transition -
Supplier Device Package TO-92-3
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA
Current - Collector (Ic) (Max) 1.2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max) 30V

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