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PBRN123EK,115

Manufacturers: NXP USA Inc.
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet: PBRN123EK,115
Description: TRANS PREBIAS NPN 250MW SMT3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer NXP USA Inc.
Product Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Packaging Tape & Reel (TR)
Part Status Obsolete
Power - Max 250mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Type NPN - Pre-Biased
Base Part Number PBRN123
Resistor - Base (R1) 2.2 kOhms
Supplier Device Package SMT3; MPAK
Resistor - Emitter Base (R2) 2.2 kOhms
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA
Current - Collector (Ic) (Max) 600mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 300mA, 5V
Voltage - Collector Emitter Breakdown (Max) 40V

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