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JANTXV1N5809US
| Manufacturers: | Microsemi Corporation |
|---|---|
| Product Category: | Diodes - Rectifiers - Single |
| Data Sheet: | JANTXV1N5809US |
| Description: | DIODE GEN PURP 100V 3A B-MELF |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Microsemi Corporation |
| Product Category | Diodes - Rectifiers - Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Military, MIL-PRF-19500/477 |
| Packaging | Bulk |
| Diode Type | Standard |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Supplier Device Package | B, SQ-MELF |
| Reverse Recovery Time (trr) | 30ns |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $13.29 | $13.02 | $12.76 |
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