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APT50GN60BDQ2G

Manufacturers: Microsemi Corporation
Product Category: Transistors - IGBTs - Single
Data Sheet: APT50GN60BDQ2G
Description: IGBT 600V 107A 366W TO247
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Microsemi Corporation
Product Category Transistors - IGBTs - Single
Series -
IGBT Type Trench Field Stop
Packaging Tube
Input Type Standard
Gate Charge 325nC
Part Status Active
Power - Max 366W
Mounting Type Through Hole
Package / Case TO-247-3
Test Condition 400V, 50A, 4.3Ohm, 15V
Switching Energy 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C 20ns/230ns
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package TO-247 [B]
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 50A
Current - Collector (Ic) (Max) 107A
Current - Collector Pulsed (Icm) 150A
Voltage - Collector Emitter Breakdown (Max) 600V

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