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APT45GR65BSCD10
| Manufacturers: | Microsemi Corporation |
|---|---|
| Product Category: | Transistors - IGBTs - Single |
| Data Sheet: | APT45GR65BSCD10 |
| Description: | INSULATED GATE BIPOLAR TRANSISTO |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Microsemi Corporation |
| Product Category | Transistors - IGBTs - Single |
| Series | - |
| IGBT Type | NPT |
| Packaging | Bulk |
| Input Type | Standard |
| Gate Charge | 203nC |
| Part Status | Obsolete |
| Power - Max | 543W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Test Condition | 433V, 45A, 4.3Ohm, 15V |
| Td (on/off) @ 25°C | 15ns/100ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-247 |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
| Reverse Recovery Time (trr) | 80ns |
| Current - Collector (Ic) (Max) | 118A |
| Current - Collector Pulsed (Icm) | 224A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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