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APT25GN120B2DQ2G

Manufacturers: Microsemi Corporation
Product Category: Transistors - IGBTs - Single
Data Sheet: APT25GN120B2DQ2G
Description: IGBT 1200V 67A 272W TMAX
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Microsemi Corporation
Product Category Transistors - IGBTs - Single
Series -
IGBT Type NPT, Trench Field Stop
Packaging Tube
Input Type Standard
Gate Charge 155nC
Part Status Active
Power - Max 272W
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Test Condition 800V, 25A, 4.3Ohm, 15V
Switching Energy 2.15µJ (off)
Td (on/off) @ 25°C 22ns/280ns
Operating Temperature -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Current - Collector (Ic) (Max) 67A
Current - Collector Pulsed (Icm) 75A
Voltage - Collector Emitter Breakdown (Max) 1200V

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