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APT100GN60B2G

Manufacturers: Microsemi Corporation
Product Category: Transistors - IGBTs - Single
Data Sheet: APT100GN60B2G
Description: IGBT 600V 229A 625W TMAX
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Microsemi Corporation
Product Category Transistors - IGBTs - Single
Series -
IGBT Type Trench Field Stop
Packaging Tube
Input Type Standard
Gate Charge 600nC
Part Status Active
Power - Max 625W
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Test Condition 400V, 100A, 1Ohm, 15V
Switching Energy 4.7mJ (on), 2.675mJ (off)
Td (on/off) @ 25°C 31ns/310ns
Operating Temperature -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 100A
Current - Collector (Ic) (Max) 229A
Current - Collector Pulsed (Icm) 300A
Voltage - Collector Emitter Breakdown (Max) 600V

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