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2N4449UB

Manufacturers: Microsemi Corporation
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2N4449UB
Description: NPN TRANSISTOR
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Microsemi Corporation
Product Category Transistors - Bipolar (BJT) - Single
Series Military, MIL-PRF-19500/317
Packaging Bulk
Part Status Active
Power - Max 360mW
Mounting Type Surface Mount
Package / Case -
Transistor Type NPN
Operating Temperature -65°C ~ 200°C (TJ)
Frequency - Transition -
Supplier Device Package UB
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max) 20V

In Stock 0 pcs

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$22.99 $22.53 $22.08

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