Image is for reference only , See Product Specifications

IPI147N12N3GAKSA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPI147N12N3GAKSA1
Description: MOSFET N-CH 120V 56A TO262-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Tube
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id 4V @ 61µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 14.7mOhm @ 56A, 10V
Power Dissipation (Max) 107W (Tc)
Supplier Device Package PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Drain to Source Voltage (Vdss) 120V
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

In Stock 0 pcs

Refrence Price ($) 1 pcs 100 pcs 500 pcs
$0.94 $0.92 $0.90

Request Quote

Fill out the below form and we will contact you as soon as possible

Bargain Finds

TSM80N1R2CL C0G
Taiwan Semiconductor Corporation
$0.93
IPA65R660CFDXKSA1
Infineon Technologies
$0.93
FQPF9P25YDTU
ON Semiconductor
$0.93
IRFH4210DTRPBF
Infineon Technologies
$0
IPI90R1K2C3XKSA1
Infineon Technologies
$0.93
TK25E06K3,S1X(S
Toshiba Semiconductor and Storage
$0.93