Image is for reference only , See Product Specifications

IPI110N20N3GAKSA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPI110N20N3GAKSA1
Description: MOSFET N-CH 200V 88A TO262-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Tube
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id 4V @ 270µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 88A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drain to Source Voltage (Vdss) 200V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

In Stock 0 pcs

Refrence Price ($) 1 pcs 100 pcs 500 pcs
$4.01 $3.93 $3.85

Request Quote

Fill out the below form and we will contact you as soon as possible

Bargain Finds

IXFA14N85XHV
IXYS
$4
IXFH16N60P3
IXYS
$4
IXTH340N04T4
IXYS
$4
IXFA26N50P3
IXYS
$4
IPP60R060P7XKSA1
Infineon Technologies
$4
IPB60R099CPAATMA1
Infineon Technologies
$4