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IPI041N12N3GAKSA1
| Manufacturers: | Infineon Technologies |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | IPI041N12N3GAKSA1 |
| Description: | MOSFET N-CH 120V 120A TO262-3 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 100A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | PG-TO262-3 |
| Gate Charge (Qg) (Max) @ Vgs | 211nC @ 10V |
| Drain to Source Voltage (Vdss) | 120V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800pF @ 60V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $3.12 | $3.06 | $3.00 |
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