Image is for reference only , See Product Specifications
IPD60N10S4L12ATMA1
| Manufacturers: | Infineon Technologies |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | IPD60N10S4L12ATMA1 |
| Description: | MOSFET N-CH TO252-3 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | Automotive, AEC-Q101, HEXFET® |
| FET Type | N-Channel |
| Packaging | Digi-Reel® |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V |
| Power Dissipation (Max) | 94W (Tc) |
| Supplier Device Package | PG-TO252-3-313 |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
In Stock 41995 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
Request Quote
Fill out the below form and we will contact you as soon as possible
Bargain Finds
