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IPB65R660CFDAATMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPB65R660CFDAATMA1
Description: MOSFET N-CH TO263-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series Automotive, AEC-Q101, CoolMOS™
FET Type N-Channel
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id 4.5V @ 200µA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 660mOhm @ 3.2A, 10V
Power Dissipation (Max) 62.5W (Tc)
Supplier Device Package D²PAK (TO-263AB)
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 650V
Input Capacitance (Ciss) (Max) @ Vds 543pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

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