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IPB049NE7N3GATMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPB049NE7N3GATMA1
Description: MOSFET N-CH 75V 80A TO263-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Cut Tape (CT)
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id 3.8V @ 91µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package D²PAK (TO-263AB)
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 75V
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

In Stock 2281 pcs

Refrence Price ($) 1 pcs 100 pcs 500 pcs
$2.37 $2.32 $2.28

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