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IPB029N06N3GE8187ATMA1
| Manufacturers: | Infineon Technologies |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | IPB029N06N3GE8187ATMA1 |
| Description: | MOSFET N-CH 60V 120A TO263-3 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ Id | 4V @ 118µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
| Power Dissipation (Max) | 188W (Tc) |
| Supplier Device Package | D²PAK (TO-263AB) |
| Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.97 | $0.95 | $0.93 |
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