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IMW120R090M1HXKSA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IMW120R090M1HXKSA1
Description: COOLSIC MOSFETS 1200V
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series CoolSiC™
FET Type N-Channel
Vgs (Max) +23V, -7V
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-247-3
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V
Power Dissipation (Max) 115W (Tc)
Supplier Device Package PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs 21nC @ 18V
Drain to Source Voltage (Vdss) 1.2kV
Input Capacitance (Ciss) (Max) @ Vds 707pF @ 800V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V

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