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IGT60R190D1SATMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IGT60R190D1SATMA1
Description: IC GAN FET 600V 23A 8HSOF
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series CoolGaN™
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) -10V
Technology GaNFET (Gallium Nitride)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Vgs(th) (Max) @ Id 1.6V @ 960µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 55.5W (Tc)
Supplier Device Package PG-HSOF-8-3
Drain to Source Voltage (Vdss) 600V
Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -

In Stock 490 pcs

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