Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | BSB104N08NP3GXUSA1 |
Description: | MOSFET N-CH 80V 13A 2WDSON |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | OptiMOS™ |
FET Type | N-Channel |
Packaging | Tape & Reel (TR) |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Vgs(th) (Max) @ Id | 3.5V @ 40µA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 10.4mOhm @ 10A, 10V |
Power Dissipation (Max) | 2.8W (Ta), 42W (Tc) |
Supplier Device Package | MG-WDSON-2, CanPAK M™ |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Drain to Source Voltage (Vdss) | 80V |
Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
---|---|---|---|
$0.60 | $0.59 | $0.58 |