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IXTD1R4N60P 11
| Manufacturers: | IXYS |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | IXTD1R4N60P 11 |
| Description: | MOSFET N-CH 600V |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | PolarHV™ |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Obsolete |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V |
| Power Dissipation (Max) | 50W (Tc) |
| Supplier Device Package | Die |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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