Manufacturers: | Global Power Technologies Group |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | GP2M005A060PGH |
Description: | MOSFET N-CH 600V 4.2A IPAK |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Global Power Technologies Group |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | - |
FET Type | N-Channel |
Packaging | Tube |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Obsolete |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2.1A, 10V |
Power Dissipation (Max) | 98.4W (Tc) |
Supplier Device Package | I-PAK |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Input Capacitance (Ciss) (Max) @ Vds | 658pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |