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GP1M009A090N
| Manufacturers: | Global Power Technologies Group |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | GP1M009A090N |
| Description: | MOSFET N-CH 900V 9.5A TO3PN |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Global Power Technologies Group |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | - |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Obsolete |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4.75A, 10V |
| Power Dissipation (Max) | 312W (Tc) |
| Supplier Device Package | TO-3PN |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Drain to Source Voltage (Vdss) | 900V |
| Input Capacitance (Ciss) (Max) @ Vds | 2324pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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