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EPC2107ENGRT

Manufacturers: EPC
Product Category: Transistors - FETs, MOSFETs - Arrays
Data Sheet: EPC2107ENGRT
Description: GAN TRANS 3N-CH 100V BUMPED DIE
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer EPC
Product Category Transistors - FETs, MOSFETs - Arrays
Series eGaN®
FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging Digi-Reel®
FET Feature GaNFET (Gallium Nitride)
Part Status Discontinued at Digi-Key
Power - Max -
Mounting Type Surface Mount
Package / Case 9-VFBGA
Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Supplier Device Package 9-BGA (1.35x1.35)
Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA

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