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EPC2103ENG
| Manufacturers: | EPC |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Data Sheet: | EPC2103ENG |
| Description: | GAN TRANS 2N-CH 80V BUMPED DIE |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | EPC |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | eGaN® |
| FET Type | 2 N-Channel (Half Bridge) |
| Packaging | Bulk |
| FET Feature | GaNFET (Gallium Nitride) |
| Part Status | Active |
| Power - Max | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 5V |
| Supplier Device Package | Die |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
| Drain to Source Voltage (Vdss) | 80V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
In Stock 0 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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