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EPC2010C
| Manufacturers: | EPC |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Data Sheet: | EPC2010C |
| Description: | GANFET TRANS 200V 22A BUMPED DIE |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | EPC |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Series | eGaN® |
| FET Type | N-Channel |
| Packaging | Digi-Reel® |
| Vgs (Max) | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 12A, 5V |
| Power Dissipation (Max) | - |
| Supplier Device Package | Die Outline (7-Solder Bar) |
| Gate Charge (Qg) (Max) @ Vgs | 5.3nC @ 5V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
