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UMG4N-7

Manufacturers: Diodes Incorporated
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Data Sheet: UMG4N-7
Description: TRANS 2NPN PREBIAS 0.15W SOT353
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Transistor Type 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) 10kOhms
Frequency - Transition 250MHz
Supplier Device Package SOT-353
Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V

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