| Manufacturers: | Diodes Incorporated |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Data Sheet: | DMN2014LHAB-7 |
| Description: | MOSFET 2N-CH 20V 9A 6-UDFN |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| Packaging | Tape & Reel (TR) |
| FET Feature | Logic Level Gate |
| Part Status | Active |
| Power - Max | 800mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 4A, 4.5V |
| Supplier Device Package | U-DFN2030-6 (Type B) |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.17 | $0.17 | $0.16 |